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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION RS801M THRU RS807M SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak Ideal for printed circuit boards High forward surge current capability RS-8M .189 (4.8) 1.193 (30.3) 1.169 (29.7) .197 (5) MECHANICAL DATA * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O .150 (3.8) .134 (3.4) .800 (20.3) .697 (17.7) .441 (11.2) .425 (10.8) .173 (4.4) .106 (2.7) .096 (2.3) .094 (2.4) .078 (2.0) .165 (4.2) .150 (3.8) .708 (18.0) .669 (17.0) .114 (2.9) .098 (2.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .043 (1.1) .035 (0.9) .402 (10.2) .303 (7.7) .386 (9.8) .287 (7.3) .303 (7.7) .287 (7.3) .031 (0.8) .023 (0.6) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Output Current at Tc = 75 C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load Operating and Storage Temperature Range TJ,TSTG -55 to + 150 0 o SYMBOL VRRM VRMS VDC IO IFSM RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS 50 35 50 100 70 100 200 140 200 400 280 400 8.0 200 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per element at 8.0A DC Maximum Reverse Current at Rated DC Blocking Voltage per element @TA = 25 oC @TC = 100 oC SYMBOL VF IR 0.2 mAmps 2001-5 RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS 1.1 10 Volts uAmps f.134 (3.1) .122 (3.1) RATING AND CHARACTERISTIC CURVES (RS801M THRU RS807M) INSTANTANEOUS FORWARD CURRENT, (A) 20 10 5 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS POWER DISSIPATION 28 24 20 16 12 8 4 0 sine wave Tj=150 2 1 0.5 TC = 150 (TYP) TC = 25 (TYP) 0.2 0.1 pulse test per one diode POWER DISSIPATION PF(W) 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 12 14 INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE RECTIFIED FORWARD CURRENT, Io (A) SURGE FORWARD CURRENT CAPABILITY PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) TYPICAL FORWARD CURRENT DERATING CURVE 3 on glass-epoxi substrate 260 IFSM sine wave 0 200 8.3ms 8.3ms 1 cycle non-repetitive Tj=25 2 P.C.B soldering land 5mmf sine wave R-load free in air 100 1 0 1 2 5 10 20 50 100 NUMBER OF CYCLE 0 0 40 80 120 160 AMBIENT TEMPERATURE, ( TYPICAL FORWARD CURRENT DERATING CURVE 9 ) AVERAGE FORWARD CURRENT, (A) 8 7 6 5 4 3 2 1 0 0 heatsink Tc Tc sine wave R-load on heatsink 25 50 75 100 125 ) 150 175 CASE TEMPERATURE, ( RECTRON |
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